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IXFH69N30P PolarHT HiPerFET Power MOSFET

IXFH69N30P Description

PolarHT HiPerFET Power MOSFET TM IXFH69N30P IXFK69N30P N-Channel Enhancement Mode Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 300 V = 69 A = 49 .

IXFH69N30P Features

* z z 1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 TO-264 300 1.13/10 Nm/lb. in. 6 10 g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode Symbol Test Conditions (TJ = 25°C, unl

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Datasheet Details

Part number
IXFH69N30P
Manufacturer
IXYS
File Size
627.44 KB
Datasheet
IXFH69N30P_IXYS.pdf
Description
PolarHT HiPerFET Power MOSFET

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PolarHT HiPerFET Power MOSFET IXYS
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