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IXFH68N20, IXFH74N20 Power MOSFET

IXFH68N20 Description

www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) IXFH/IXFT 68N20 IXF.

IXFH68N20 Features

* • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) • Low • • • • • • • • • • • • rated package inductance - easy to drive and to protect Fast intrinsic Rectifier 1.6 mm (0.062 in. ) from case for 10 s Mount

IXFH68N20 Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 30 35 V V nA mA mA mW mW DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor contro

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXFH68N20, IXFH74N20. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXFH68N20, IXFH74N20
Manufacturer
IXYS Corporation
File Size
188.96 KB
Datasheet
IXFH74N20_IXYSCorporation.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXFH68N20, IXFH74N20.
Please refer to the document for exact specifications by model.

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Power MOSFET IXYS Corporation
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