IXFH100N25P - PolarHT HiPerFET Power MOSFET

Datasheet Details

Part number	IXFH100N25P
Manufacturer	IXYS
File Size	109.47 KB
Description	PolarHT HiPerFET Power MOSFET
Datasheet	IXFH100N25P_IXYS.pdf

z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Easy to mount Space savings 1.6 mm (0.062 in. ) from case for 10 s Mounting torque 300 1.13/10 Nm/lb. in. 5.5 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 5.0 ±100 1.

📁 IXFH100N25P Similar Datasheet

IXFH102N15T - Power MOSFET (IXYS Corporation)
IXFH10N100 - Power MOSFET (IXYS Corporation)
IXFH10N60 - (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFH10N65 - Power MOSFET (IXYS Corporation)
IXFH10N80P - Power MOSFET (IXYS Corporation)
IXFH10N90 - Power MOSFET (ETC)
IXFH110N15T2 - N-Channel MOSFET (INCHANGE)
IXFH110N25T - TrenchHV Power MOSFET HiPerFET (IXYS Corporation)

Other Datasheets by IXYS

Published: Jun 12, 2010 |