IXFH12N80P - Power MOSFET

Datasheet Details

D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 μA VGS(th) VDS = VGS, ID = 2.5 mA Characteristic Values Min. Typ. Max. 800 V 3.0 5.5 V z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect IGSS I DSS RDS(on) VGS = ±30 V, VDS = 0 V V =V DS DSS V =0V GS T J = 125°C VGS = 10 V, ID = 0.5 ID25 , Note 1 ±100 nA 25 μA Advanta.

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Published: Feb 18, 2016 |