IXFH12N100P - Polar HiPerFET Power MOSFETs

IXYS Corporation

Datasheet Details

Part number	IXFH12N100P
Manufacturer	IXYS Corporation
File Size	192.24 KB
Description	Polar HiPerFET Power MOSFETs
Datasheet	IXFH12N100P_IXYSCorporation.pdf

z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 100 V V nA.

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Published: May 30, 2011 |