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IXFH6N100F Power MOSFETs

IXFH6N100F Description

Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 6N100F VDSS .

IXFH6N100F Features

* RF capable MOSFETs
* Double metal process for low gate resistance
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance - easy to drive and to protect

IXFH6N100F Applications

* DC-DC converters
* Switched-mode and resonant-mode power supplies, >500kHz switching
* DC choppers
* 13.5 MHz industrial applications
* Pulse generation
* Laser drivers
* RF amplifiers
* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specifie

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Datasheet Details

Part number
IXFH6N100F
Manufacturer
IXYS Corporation
File Size
820.75 KB
Datasheet
IXFH6N100F_IXYSCorporation.pdf
Description
Power MOSFETs

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