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IXBX75N170 - Bipolar MOS Transistor

Download the IXBX75N170 datasheet PDF. This datasheet also covers the IXBK75N170 variant, as both devices belong to the same bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International Standard Packages z High Blocking Voltage z High Current Handling Capability z Anti-Parallel Diode Advantages z High Power Density z Low Gate Drive Requirement z Intergrated Diode Can Be Used for Protection.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBK75N170-IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXBX75N170A Bipolar MOS Transistor
IXBX25N250 Bipolar MOS Transistor
IXBX55N300 Monolithic Bipolar MOS Transistor
IXBX64N250 Monolithic Bipolar MOS Transistor
IXBA12N300HV Bipolar MOS Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES = I = C110 ≤ VCE(sat) 1700V 75A 3.1V Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1700 V 1700 V ±20 V ±30 V TC = 25°C (Chip Capabilitty) TC = 25°C (Lead RMS Limit) TC = 110°C TC = 25°C, 1ms 200 A 160 A 75 A 580 A VGE= 15V, TVJ = 125°C, RG = 1Ω ICM = 150 A Clamped Inductive Load VCE < 0.8 • VCES TC = 25°C 1040 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
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