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IXBX75N170A - Bipolar MOS Transistor

Download the IXBX75N170A datasheet PDF. This datasheet also covers the IXBK75N170A variant, as both devices belong to the same bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • High Blocking Voltage.
  • Fast Switching.
  • High Current Handling Capability.
  • Anti-Parallel Diode Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.
  • Intergrated Diode Can Be Used for Protection.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBK75N170A-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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BiMOSFETTM Monolithic IXBK75N170A Bipolar MOS Transistor IXBX75N170A VCES = I = C90  VCE(sat) t = fi(typ) 1700V 65A 6.00V 60ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1700 V 1700 V ±20 V ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms 110 A 65 A 300 A VGE= 15V, TVJ = 125°C, RG = 1 ICM = 100 A Clamped Inductive Load VCE < 0.8 • VCES TC = 25°C 1040 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 300 °C 260 °C Mounting Torque (TO-264 ) Mounting Force (PLUS247 ) 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb.
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