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IXBX55N300 - Monolithic Bipolar MOS Transistor

Download the IXBX55N300 datasheet PDF. This datasheet also covers the IXBK55N300 variant, as both devices belong to the same monolithic bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Blocking Voltage.
  • International Standard Packages.
  • Low Conduction Losses.
  • High Current Handling Capability.
  • MOS Gate Turn-On - Drive Simplicity Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBK55N300-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXBX25N250 Bipolar MOS Transistor
IXBX64N250 Monolithic Bipolar MOS Transistor
IXBX75N170 Bipolar MOS Transistor
IXBX75N170A Bipolar MOS Transistor
IXBA12N300HV Bipolar MOS Transistor

Full PDF Text Transcription

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK55N300 IXBX55N300 Symbol VCES VCGR VGES V GEM IC25 I C110 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM T stg TL Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ±25 V ±35 V TC = 25°C (Chip Capability) T = 110°C C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load 130 A 55 A 600 A ICM = 110 A 1500 V VGE = 15V, TJ = 125°C, RG = 10, VCE = 1250V, Non-Repetitive 10 µs TC = 25°C 625 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062 in.) from Case for 10 Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120/4.5..27 Nm/lb.
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