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IXBX64N250 - Monolithic Bipolar MOS Transistor

Download the IXBX64N250 datasheet PDF. This datasheet also covers the IXBK64N250 variant, as both devices belong to the same monolithic bipolar mos transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Blocking Voltage.
  • Low Switching Losses.
  • High Current Handling Capability.
  • Anti-Parallel Diode Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXBK64N250-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXBF9N140 Power MOSFET IXYS Corporation
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXBX25N250 Bipolar MOS Transistor
IXBX55N300 Monolithic Bipolar MOS Transistor
IXBX75N170 Bipolar MOS Transistor
IXBX75N170A Bipolar MOS Transistor
IXBA12N300HV Bipolar MOS Transistor

Full PDF Text Transcription

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High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110  VCE(sat) 2500V 64A 3.0V TO-264 (IXBK) Symbol VCES VCGR VGES V GEM I C25 I LRMS IC100 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg T L Md F C Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 2500 V 2500 V ±25 V ±35 V T C = 25C (Chip Capability) Lead Current Limit, RMS 156 A 120 A TC = 110°C TC = 25°C, 1ms 64 A 800 A VGE= 15V, TVJ = 125°C, RG = 1 ICM = 160 A Clamped Inductive Load V < 0.8 • V CE CES VGE = 15V, TJ = 125°C, RG = 5, VCE = 1250V, Non-Repetitive 10 µs TC = 25°C 735 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 300 °C 1.
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