IXBF20N360 - Bipolar MOS Transistor

Datasheet Details

Silicon Chip on Direct-Copper Bond (DCB) Substrate.
Isolated Mounting Surface.
4000V~ Electrical Isolation.
High Blocking Voltage.
High Frequency Operation Advantages.
Low Gate Drive Requirement.
High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES VGE(th) ICES IGES IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = 3000V, VGE = 0V Note 2, TJ = 125°C VCE = 0V, VGE = ± 20V VCE(SAT) IC = 20A, VGE = 15V, Note 1 TJ.

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Published: Feb 9, 2025 |