Datasheet4U.com

IXBH16N170A - Bipolar MOS Transistor

IXYS Corporation

📥 Download Datasheet

IXBH16N170A Datasheet Preview — Preview of IXBH16N170A PDF

datasheet Preview Page 2

Datasheet Details

Part number	IXBH16N170A
Manufacturer	IXYS Corporation
File Size	51.85 KB
Description	Bipolar MOS Transistor
Datasheet	IXBH16N170A_IXYSCorporation.pdf

IXBH16N170A Product details

Features

Monolithic fast reverse diode.
High Blocking Voltage.
JEDEC TO-268 surface mount and JEDEC TO-247 AD packages.
Low switching losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Molding epoxies meet UL 94 V-0 flammability classification Maximum Lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-2.

📁 IXBH16N170A Similar Datasheet

IXBH16N170 - BIMOSFET Monolithic Bipolar MOS Transistor (IXYS)
IXBH12N300 - Bipolar MOS Transistor (IXYS)
IXBH14N300HV - Bipolar MOS Transistor (IXYS)
IXBH20N300 - Bipolar MOS Transistor (IXYS)
IXBH20N360HV - Monolithic Bipolar MOS Transistor (IXYS)
IXBH22N300HV - Bipolar MOS Transistor (IXYS)
IXBH2N250 - Monolithic Bipolar MOS Transistor (IXYS)
IXBH32N300 - Bipolar MOS Transistor (IXYS)

Other Datasheets by IXYS Corporation

IXBH10N170 - Bipolar MOS Transistor
IXBH15N140 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH15N160 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH40N140 - High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH42N170 - Monolithic Bipolar MOS Transistor
IXBH42N170A - Monolithic Bipolar MOS Transistor

Published: Apr 5, 2005 |