Datasheet Details
Part number:
IXBH12N300, IXBT12N300
Manufacturer:
IXYS
File Size:
774.59 KB
Description:
Bipolar mos transistor.
Note:
This datasheet PDF includes multiple part numbers: IXBH12N300, IXBT12N300.
Please refer to the document for exact specifications by model.
IXBH12N300, IXBT12N300, Bipolar MOS Transistor
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBT12N300 IXBH12N300 VCES = IC110 = VCE(sat) 3000V 12A 3.2V Symbol VCES VCGR VGES V GEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD M d Weight Test Conditions Maximum Ratings TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 3000 V 3000 V ± 20 V ± 30 V TC = 25°C TC = 110°C TC = 25°C, 1ms 30 A 12 A 100 A VGE = 15V, TVJ = 125°C, RG = 30 ICM = 98 A Clampe
IXBH12N300 Features
* High Blocking Voltage
* International Standard Packages
* Anti-Parallel Diode
* Low Conduction Losses Advantages
* Low Gate Drive Requirement
* High Power Density Applications:
* Switched-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
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