IXBH2N250 - Monolithic Bipolar MOS Transistor

Datasheet Details

Part number	IXBH2N250
Manufacturer	IXYS
File Size	243.73 KB
Description	Monolithic Bipolar MOS Transistor
Datasheet	IXBH2N250-IXYS.pdf

High Blocking Voltage.
Integrated Anti-parallel Diode.
International Standard Packages.
Low Conduction Losses Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VCE = VGE 2500 V VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE 3.0 VCE = 0.8.
VCES, VGE = 0V TJ = 125C VCE = 0V, VGE = 20V IC = 2A, VGE = 15V, Note 1 TJ = 125C 5.5 V 10 A 100 μA 100 nA 3.15 4.08.

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Published: Feb 9, 2025 |