IXBF32N300 Datasheet (IXYS) - Bipolar MOS Transistor

IXBF32N300, Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) IXBF32N300 Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 40 A IC90 TC = 90°C 22 A ICM TC = 25°C, 1ms 250 A SSOA VGE = 15V, TVJ = 125°C, RG = 10 ICM = 80 A (RBSOA) Clamped Inductive Load V  2400 V CES PC TC = 25°C 160 W T -55 +150 °C

IXBF32N300 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 3000V Electrical Isolation

* High Blocking Voltage

* International Standard Package

* Low Conduction Losses Advantages

* Low Gate Drive Requirement

* High Power Density Applications: