IXBF20N300 Datasheet (IXYS) - Bipolar MOS Transistor

IXBF20N300, Bipolar MOS Transistor

High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Not for New Design IXBF20N300 (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3000 V 3000 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C 34 A IC110 TC = 110°C 14 A ICM TC = 25°C, 1ms 150 A SSOA VGE = 15V, TVJ = 125°C, RG = 20 ICM = 130 A (RBSOA) Clamped Inductive Load 1500 V PC TC = 25°C 150 W TJ

IXBF20N300 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Blocking Voltage

* High Peak Current Capability

* Low Saturation Voltage Advantages

* Low Gate Drive Requirement

* High Power Density Applications