The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
Preliminary Data Sheet
IXTH 6N120 IXTT 6N120
VDSS ID25
RDS(on)
= 1200 V = 6A = 2.6 Ω
Symbol
VDSS VDGR VGS VGSM ID25
IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg TL Md Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
6
A
24
A
6
A
25
mJ
500
mJ
5
V/ns
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
IXTT6N120 Datasheet
