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IXSK30N60BD1 - High Speed IGBT

Features

  • International standard packages: JEDEC TO-247, TO-264& TO-268.
  • Short Circuit SOA capability.
  • Medium freqeuncy IGBT and antiparallel FRED in one package.
  • New generation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.0 V = 140 ns www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 W, non repetitive TC = 25°C Maximum Ratings 600 600 ±20 ±30 55 30 110 ICM = 60 10 200 -55 ... +150 150 -55 ...
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