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IXSK35N120BD1 - HIGH VOLTAGE IGBT WITH DIODE

Features

  • • Hole-less TO-247 package for clip mounting • High frequency IGBT and anti-parallel FRED in one package • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM.

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Full PDF Text Transcription

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High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Weight 1.6 mm (0.063 in) from case for 10 s TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 5 W Clamped inductive load VGE = 15 V, VCE = 720 V, TJ = 125°C RG = 5 W, non repetitive TC = 25°C IGBT Diode IXSK 35N120BD1 IXSX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE(SAT) = 3.6 V Maximum Ratings 1200 1200 ± 20 ± 30 70 35 140 ICM = 90 @ 0.8 VCES 10 300 190 -55 ... +150 150 -55 ...
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