IXSH25N100, IXSM25N100 - Low VCE(sat) IGBT

IXYS Corporation

Datasheet Details

Part number	IXSH25N100, IXSM25N100
Manufacturer	IXYS Corporation
File Size	112.32 KB
Description	Low VCE(sat) IGBT
Datasheet	IXSM25N100_IXYSCorporation.pdf
Note	This datasheet PDF includes multiple part numbers: IXSH25N100, IXSM25N100. Please refer to the document for exact specifications by model.

International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q q BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 2.5 mA, VCE = VGE V CE = 0.8.
VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V.

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Published: Aug 19, 2008 |