IXFV26N60P - N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated

IXYS Corporation

Datasheet Details

Part number	IXFV26N60P
Manufacturer	IXYS Corporation
File Size	269.78 KB
Description	N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
Datasheet	IXFV26N60P_IXYSCorporation.pdf

z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99435(08/05) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved IXFV 26N60P Symbol Test Conditions IXFH 26N60P IXFQ 26N60P IXFV 26N60PS www. DataSheet4U. com IXFT 26N60P Characteristic Values (TJ = 25°C, unless otherwise spec.

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Published: Apr 2, 2010 |