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IXFV110N25T - Trench Gate Power HiperFET

IXYS Corporation

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Datasheet Details

Part number	IXFV110N25T
Manufacturer	IXYS Corporation
File Size	204.41 KB
Description	Trench Gate Power HiperFET
Datasheet	IXFV110N25T_IXYSCorporation.pdf

IXFV110N25T Product details

Features

z z International standard packages Avalanche rated www. DataSheet4U. net Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 4.5 ± 200 V V nA.

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Published: May 23, 2011 |