IXFV110N10PS - PolarHT HiPerFET Power MOSFET

IXYS

Datasheet Details

Part number	IXFV110N10PS
Manufacturer	IXYS
File Size	184.04 KB
Description	PolarHT HiPerFET Power MOSFET
Datasheet	IXFV110N10PS_IXYS.pdf

z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Advantages z Easy to mount z Space savings z High power density © 2005 IXYS All rights reserved DS99212A(01/05) IXFH 110N10P IXFV 110N10P IXFV 110N10PS www. DataSheet4U. com Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ.

📁 IXFV110N10PS Similar Datasheet

Other Datasheets by IXYS

Published: Jun 16, 2010 |