IXFH26N50P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXFV26N50P, IXFH26N50P
Manufacturer:
IXYS Corporation
File Size:
243.62 KB
Description:
Avalanche rated fast instrinsic diode.
Note:
This datasheet PDF includes multiple part numbers: IXFV26N50P, IXFH26N50P.
Please refer to the document for exact specifications by model.
IXFV26N50P, IXFH26N50P, Avalanche Rated Fast Instrinsic Diode
PolarHVTM Power MOSFET Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet www.DataSheet4U.com IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 trr RDS(on) = = ≤ ≤ 500 V 26 A 230 mΩ 200 ns Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuos Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 26 78 26 4
IXFV26N50P Features
* z International standard packages z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 I
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