IXFR44N80P Datasheet - IXYS Corporation

IXFR44N80P Power MOSFET

www.DataSheet4U.com PolarHV HiPerFET Power MOSFET Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TM IXFR 44N80P VDSS ID25 RDS(on) trr = 800 V = 25 A ≤ 190 mΩ ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/.

IXFR44N80P Features

* z z z 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120 /4.5..25 5 z z z N/lb g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain

IXFR44N80P Datasheet (121.04 KB)