Datasheet4U.com

IXFR48N60P - Power MOSFET

IXYS

📥 Download Datasheet

IXFR48N60P Datasheet Preview — Preview of IXFR48N60P PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IXFR48N60P
Manufacturer	IXYS
File Size	140.99 KB
Description	Power MOSFET
Datasheet	IXFR48N60P_IXYS.pdf

IXFR48N60P Product details

Features

z TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s VISOL FC Weight 50/60 Hz, RMS, 1 minute Mounting Force International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode z z z Advantages Symbol Test Conditions (T.

📁 IXFR48N60P Similar Datasheet

IXFR48N50Q - Power MOSFET (IXYS Corporation)
IXFR40N50Q2 - HiPerFET Power MOSFETs (IXYS Corporation)
IXFR40N90P - Power MOSFET (IXYS Corporation)
IXFR44N50P - Power MOSFET (IXYS Corporation)
IXFR44N50Q - Power MOSFET (IXYS Corporation)
IXFR44N60 - Power MOSFET (IXYS Corporation)
IXFR44N80P - Power MOSFET (IXYS Corporation)
IXFR4N100Q - HiPerFET Power MOSFETs (IXYS Corporation)

Other Datasheets by IXYS

IXFR102N30P - Polar HiPerFET Power MOSFET
IXFR120N25P - PolarHT HiPerFET Power MOSFET
IXFR140N20P - PolarHT HiPerFET Power MOSFET
IXFR14N100Q2 - HiPerFET Power MOSFET
IXFR14N80 - Power MOSFET
IXFR150N15 - Power MOSFET

Published: Jun 12, 2010 |