IXFR44N50P - Power MOSFET

IXYS Corporation

Datasheet Details

l l International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode l 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting Force 300 2500 20..120 / 4.5..25 5 l l l Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise spe.

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Published: Mar 25, 2010 |