IXBH9N160G - Monolithic Bipolar MOS Transistor

IXYS Corporation

Datasheet Details

Part number	IXBH9N160G
Manufacturer	IXYS Corporation
File Size	177.33 KB
Description	Monolithic Bipolar MOS Transistor
Datasheet	IXBH9N160G_IXYSCorporation.pdf

High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON.
MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage.
Monolithic construction - High Blocking Voltage Capability - Very Fast turn-off Characteristics.
International Standard Package - Reverse Conducting Capability Advantages.
Low Gate Drive Requirement.
High Power Density.

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Published: Apr 5, 2005 |