IXBH9N160G Datasheet (IXYS Corporation) - Monolithic Bipolar MOS Transistor

IXBH9N160G, Monolithic Bipolar MOS Transistor

High Voltage BiMOSFETTM IXBH9N160G Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode MOSFET Transistor VCES = 1600V IC25 = 9A VCE(sat)  7.0V tfi(typ) = 70ns TO-247 Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C TTCC = 90°C = 25°C, 1ms CVlGaEm=p1e0dVIn, dTuVJc=tiv1e2L5o°Cad, RG = 27 TC = 25°C Maximum Lead Temperature for Soldering 1.6 m

IXBH9N160G Features

* High Voltage Package - Replaces High Voltage Darlingtons and Series Connected MOSFETs - Lower Effective RDSON

* MOS Gate turn-on - Drive Simplicity - MOSFET Compatible for 10V turn on Gate Voltage

* Monolithic construction - High Blocking Voltage Capability - Very Fast turn-off Charact