IS66WVD4M16ALL Datasheet (ISSI) - 64Mb Async and Burst CellularRAM

IS66WVD4M16ALL, 64Mb Async and Burst CellularRAM

CellularRAM™ (Trademark of MicronTechnology) products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

The 64Mb DRAM core device is organized as 4 Meg x 16 bits.

This device is a variation of the industry-standard Flash control interface, with

IS66WVD4M16ALL 64Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD4M16ALL is an integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits.

The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst mode for increased read and write bandwidth.

The device includes several power saving modes : Reduced Array Refresh mode where data is retained in a portion

IS66WVD4M16ALL Features

* Single device supports asynchronous and burst operation

* Mixed Mode supports asynchronous write and synchronous read operation

* Dual voltage rails for optional performance

* VDD 1.7V~1.95V, VDDQ 1.7V~1.95V

* Multiplexed address and data bus

* ADQ0~ADQ15

* Asynchronous