IS66WV51216DALL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Integrated Silicon Solution

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Datasheet Details

Part number	IS66WV51216DALL
Manufacturer	Integrated Silicon Solution
File Size	458.73 KB
Description	8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM
Datasheet	IS66WV51216DALL-IntegratedSiliconSolution.pdf

IS66WV51216DALL Product details

Description

The ISSI IS66WV51216DALL and IS66/67WV51216DBLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits.It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CS1 is HIGH (deselected) or when CS2 is (deselected) or when CS1 is , CS2 is and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipat

Features

High-speed access time:.
70ns (IS66WV51216DALL, IS66/67WV51216DBLL).
55ns (IS66/67WV51216DBLL).
CMOS low power operation.
Single power supply.
Vdd = 1.7V-1.95V (IS66WV51216 ALL).
Vdd = 2.5V-3.6V (IS66/67WV51216 BLL).
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.
Lead-free available.

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Published: Jun 1, 2014 |