IS66WV51216EALL Datasheet (ISSI) - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV51216EALL, ULTRA LOW POWER PSEUDO CMOS STATIC RAM

The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI’s high performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power

IS66WV51216EALL Features

* High-Speed access time : - 70ns ( IS66WV51216EALL ) - 60ns (IS66/67WV51216EBLL )

* CMOS Lower Power Operation

* Single Power Supply - VDD =1.7V~1.95V( IS66WV51216EALL ) - VDD =2.5V~3.6V (IS66/67WV51216EBLL )

* Three State Outputs

* Data Control for Upper and Lower bytes

* L