IS66WVD1M16ALL - 16Mb Async and Burst CellularRAM

ISSI

IS66WVD1M16ALL Datasheet Preview — Preview of IS66WVD1M16ALL PDF

Datasheet Details

Part number	IS66WVD1M16ALL
Manufacturer	ISSI
File Size	1.36 MB
Description	16Mb Async and Burst CellularRAM
Datasheet	IS66WVD1M16ALL-ISSI.pdf

IS66WVD1M16ALL Product details

Description

CellularRAM™ (Trademark of MicronTechnology) products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

Features

Single device supports asynchronous and burst operation.
Mixed Mode supports asynchronous write and synchronous read operation.
Dual voltage rails for optional performance.
VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
Multiplexed address and data bus.
ADQ0~ADQ15.
Asynchronous mode read access : 70ns.
Burst mode for Read and Write operation.
4, 8, 16 or Continuous.
Low Power Consumption.
Asynchronous Operation < 25 mA.
Burst operation < 45 mA (@13.

📁 IS66WVD1M16ALL Similar Datasheet

IS66WV51216DALL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM (Integrated Silicon Solution)
IS66WV51216DBLL - 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM (Integrated Silicon Solution)
IS660 - HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR (ISOCOM)
IS661 - HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR (ISOCOM)
IS662 - HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR (ISOCOM)
IS6003 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ETC)
IS6005 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ETC)
IS6010 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ETC)

Other Datasheets by ISSI

IS66WVD2M16ALL - 32Mb Async and Burst CellularRAM
IS66WVD2M16DALL - 32Mb Async and Burst CellularRAM
IS66WVD4M16ALL - 64Mb Async and Burst CellularRAM
IS66WV1M16DALL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16DBLL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM
IS66WV1M16EALL - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

Published: Jun 9, 2016 |