IS66WV1M16EALL Datasheet (ISSI) - ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV1M16EALL, ULTRA LOW POWER PSEUDO CMOS STATIC RAM

The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits.

It is fabricated using ISSI’s high performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power con

IS66WV1M16EALL Features

* High-Speed access time : - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL )

* CMOS Lower Power Operation

* Single Power Supply

* VDD =1.7V~1.95V( IS66WV1M16EALL )

* VDD =2.5V~3.6V (IS66/67WV1M16EBLL )

* Three State Outputs

* Data Control for Upper and Lower bytes