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IRG4PH40UD2PBF Insulated Gate Bipolar Transistor

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Description

PD - 95570 IRG4PH40UD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number
IRG4PH40UD2PBF
Manufacturer
IRF
File Size
268.07 KB
Datasheet
IRG4PH40UD2PBF_IRF.pdf
Description
Insulated Gate Bipolar Transistor

Features

* • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel dio

IRG4PH40UD2PBF Distributors

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