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IRG4PH40UD2-EP Insulated Gate Bipolar Transistor

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Description

PD - 95239 IRG4PH40UD2-EP • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM u.

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Datasheet Specifications

Part number
IRG4PH40UD2-EP
Manufacturer
IRF
File Size
231.09 KB
Datasheet
IRG4PH40UD2-EP_IRF.pdf
Description
Insulated Gate Bipolar Transistor

Applications

* • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less / no snubbing • Induction cooking systems • Microwave Ovens • Resonant Circuits TO-247AD Parameter Ma

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