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IRG4PH40UD2 Insulated Gate Bipolar Transistor

IRG4PH40UD2 Description

PD - 94739 IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRG4PH40UD2 Features

* • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel dio

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Datasheet Details

Part number
IRG4PH40UD2
Manufacturer
IRF
File Size
248.85 KB
Datasheet
IRG4PH40UD2_IRF.pdf
Description
Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor IRF
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