Datasheet Details
- Part number
- IRG4PH40UD2-E
- Manufacturer
- IRF
- File Size
- 296.09 KB
- Datasheet
- IRG4PH40UD2-E_IRF.pdf
- Description
- Insulated Gate Bipolar Transistor
IRG4PH40UD2-E Description
PD - 96781 IRG4PH40UD2-E .IRG4PH40UD2-E Features
* INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonantIRG4PH40UD2-E Applications
* Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less / no snubbing Induction cooking systems Microwave Ovens Resonant Circuits TO-247AD Parameter Ma
📁 Related Datasheet
📌 All Tags