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STP21NM60ND N-Channel MOSFET

STP21NM60ND Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP21NM60ND *.

STP21NM60ND Features

* With TO-220 package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP21NM60ND Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous@TC=25℃ TC=125℃ 17 10 A IDM Drain Current-Single Pulsed 68 A PD Total Dissipation @TC=25℃ 14

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Datasheet Details

Part number
STP21NM60ND
Manufacturer
INCHANGE
File Size
242.46 KB
Datasheet
STP21NM60ND-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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