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STP20NM60 N-Channel MOSFET

STP20NM60 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP20NM60 *.

STP20NM60 Features

* Typical RDS(on)=0.25Ω
* Low input capacitance and gate charge
* Low gate input resistances
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STP20NM60 Applications

* Suitable for increasing power density of high voltage converters allowing system miniaturization
* High efficiencies.
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Dr

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Datasheet Details

Part number
STP20NM60
Manufacturer
INCHANGE
File Size
185.70 KB
Datasheet
STP20NM60-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE STP20NM60-like datasheet