STI24NM60N Datasheet - INCHANGE

STI24NM60N, N-Channel MOSFET

isc N-Channel MOSFET Transistor .
Low Drain-Source On-Resistance APPLICATIONS. Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source.

STI24NM60N-INCHANGE.pdf

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Datasheet Details

Part number:

STI24NM60N

Manufacturer:

INCHANGE

File Size:

310.02 KB

Description:

N-Channel MOSFET

Features

* Drain Current
* ID= 17A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 190mΩ(Max)
* 100% avalanche tested

Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Tempe

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STI24NM60N N-Channel MOSFET INCHANGE

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