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STI22NM60N N-Channel MOSFET

STI22NM60N Description

Isc N-Channel MOSFET Transistor *.

STI22NM60N Features

* Low input capacitance and gate charge
* Low gate input resistances
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STI22NM60N Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 16 10 A IDM Drain Current-Single Pulsed 64 A PD Total Dissipation 125 W Tj

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Datasheet Details

Part number
STI22NM60N
Manufacturer
INCHANGE
File Size
289.46 KB
Datasheet
STI22NM60N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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