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STI12N65M5 N-Channel MOSFET

STI12N65M5 Description

isc N-Channel Mosfet Transistor *.

STI12N65M5 Features

* Drain Current ID= 8.5A@ TC=25℃
* Drain Source Voltage- : VDSS=650V(Min)
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STI12N65M5 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 8.5 A IDM Pulse Drain Current 34 A Ptot Total Dissipation@TC=25℃ 70 W Tj Max. Oper

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Datasheet Details

Part number
STI12N65M5
Manufacturer
INCHANGE
File Size
293.16 KB
Datasheet
STI12N65M5-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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