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STI150N10F7 N-Channel MOSFET

STI150N10F7 Description

isc N-Channel MOSFET Transistor *.

STI150N10F7 Features

* With TO-262(I2PAK) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

STI150N10F7 Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous; 110 A IDM Drain Current-Single Pulsed 440 A PD Total Dissipation 250 W

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Datasheet Details

Part number
STI150N10F7
Manufacturer
INCHANGE
File Size
290.18 KB
Datasheet
STI150N10F7-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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