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IXTP8N65X2M - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	IXTP8N65X2M
Manufacturer	INCHANGE
File Size	257.72 KB
Description	N-Channel MOSFET
Datasheet	IXTP8N65X2M-INCHANGE.pdf

IXTP8N65X2M Product details

Features

High power dissipation.
Static drain-source on-resistance: RDS(on) ≤ 550mΩ@VGS=10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 16, 2020 |