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IXTP80N10T, IXTA80N10T Power MOSFET

IXTP80N10T Description

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA80N10T IXTP80N10T VDSS ID25 RDS(on) = = ≤ 100V 80A 14m.

IXTP80N10T Features

* z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z Low RDS(on) Advantages z z z Eas

IXTP80N10T Applications

* z z z VGS = 10V, ID = 25A, Note 1 & 2 14 mΩ z z z Automotive - Motor Drives - DC/DC Conversion - 42V Power Bus - ABS Systems DC/DC Converters and Off-Line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications Distributed Power Architechtures and VRMs Electronic Valve T

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This datasheet PDF includes multiple part numbers: IXTP80N10T, IXTA80N10T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTP80N10T, IXTA80N10T
Manufacturer
IXYS
File Size
202.10 KB
Datasheet
IXTA80N10T-IXYS.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTP80N10T, IXTA80N10T.
Please refer to the document for exact specifications by model.

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Power MOSFET IXYS
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