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IXTP80N12T2, IXTA80N12T2 Power MOSFET

IXTP80N12T2 Description

TrenchT2TM Power MOSFETs IXTA80N12T2 IXTP80N12T2 VDSS = 120V ID25 = 80A RDS(on)  17m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Re.

IXTP80N12T2 Features

* International Standard Packages
* 175°C Operating Temperature
* Avalanche Rated
* Low RDS(on)
* Fast Intrinsic Rectifier
* High Current Handling Capability Advantages
* Easy to Mount
* Space Savings

IXTP80N12T2 Applications

* Synchronous Rectification
* DC/DC Converters and Off-Line UPS
* Primary- Side Switch
* High Current Switching Applications © 2013 IXYS CORPORATION, All Rights Reserved DS100240A(8/13) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXTP80N12T2, IXTA80N12T2. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTP80N12T2, IXTA80N12T2
Manufacturer
IXYS
File Size
205.19 KB
Datasheet
IXTA80N12T2-IXYS.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTP80N12T2, IXTA80N12T2.
Please refer to the document for exact specifications by model.

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