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IXTP80N10T - Power MOSFET

Download the IXTP80N10T datasheet PDF. This datasheet also covers the IXTA80N10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Diode z Low RDS(on) Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 100μA VGS = ± 20V, VDS =.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA80N10T-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP80N10T N-Channel MOSFET INCHANGE
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP80N12T2 Power MOSFET
IXTP80N075L2 Power MOSFET
IXTP86N20T Power MOSFET
IXTP8N50P PolarHV Power MOSFET
IXTP8N65X2 Power MOSFET

Full PDF Text Transcription

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA80N10T IXTP80N10T VDSS ID25 RDS(on) = = ≤ 100V 80A 14mΩ TO-263 AA (IXTA) G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 100 100 ± 20 ± 30 80 220 25 400 230 10 -55 ... +175 175 -55 ... +175 V V V V A A A mJ W V/ns °C °C °C °C °C Nm/lb.in. g g G = Gate S = Source D (Tab) TO-220AB (IXTP) G DS D (Tab) D = Drain Tab = Drain Features z z 1.6mm (0.062 in.
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