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IXTP80N12T2 - Power MOSFET

Download the IXTP80N12T2 datasheet PDF. This datasheet also covers the IXTA80N12T2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • International Standard Packages.
  • 175°C Operating Temperature.
  • Avalanche Rated.
  • Low RDS(on).
  • Fast Intrinsic Rectifier.
  • High Current Handling Capability Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA80N12T2-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP80N12T2 N-Channel MOSFET INCHANGE
IXTP80N10T N-Channel MOSFET INCHANGE
IXTP80N075L2 N-Channel MOSFET INCHANGE
IXTP86N20T N-Channel MOSFET INCHANGE
IXTP88N085T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP80N10T Power MOSFET
IXTP80N075L2 Power MOSFET
IXTP86N20T Power MOSFET
IXTP8N50P PolarHV Power MOSFET
IXTP8N65X2 Power MOSFET

Full PDF Text Transcription

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TrenchT2TM Power MOSFETs IXTA80N12T2 IXTP80N12T2 VDSS = 120V ID25 = 80A RDS(on)  17m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 120 V 120 V 20 V 30 V 80 A 200 A 40 A 400 mJ 325 W -55 ... +175 175 -55 ... +175  C  C  C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.
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