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IRL8113 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRL8113,IIRL8113 *.

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Datasheet Specifications

Part number
IRL8113
Manufacturer
INCHANGE
File Size
241.48 KB
Datasheet
IRL8113-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤6.0mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 105 IDM Drain Current-Single Pulsed 420 PD Total Dissipation @TC=25℃ 110 Tj Max. Operating Junction Temperature 175 Tstg Storage T

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