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IRL8114PbF Power MOSFET

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Description

Application * Optimized for UPS/Inverter Applications * Low Voltage Power Tools Benefits * Low RDS(on) at 4.5V VGS * Low Gate Char.

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Features

* rating; pulse width limited by max. junction temperature.  Limited by TJMAX, starting TJ = 25°C, L = 0.39mH, RG = 50, IAS = 32A, VGS =10V.
* Pulse width  400µs; duty cycle  2%.  R is measured at TJ approximately 90°C.  Pulse drain current is limited at 360A by source bond technology. IR

Applications

*  Low Voltage Power Tools Benefits
*  Low RDS(on) at 4.5V VGS
*  Low Gate Charge
*  Fully Characterized Capacitance and Avalanche SOA
*  Lead-Free IRL8114PbF HEXFET® Power MOSFET   D VDSS 30V RDS(on) typ. 3.5m G max 4.5m ID (Silicon Limited) 120A IS D (Package L

IRL8114PbF Distributors

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